US Patent Issued to ENTEGRIS on April 1 for "3-dimensional NAND memory with reduced thermal budget" (South Korean Inventor)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,267,999, issued on April 1, was assigned to ENTEGRIS INC. (Billerica, Mass.).

"3-dimensional NAND memory with reduced thermal budget" was invented by SungHae Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of manufacture and memory cells manufactured according to the methods are described. The manufacture has a lower thermal budget and experiences less heating by including a blocking layer including MgO. The method of manufacture may include annealing following deposition of the MgO, with the annealing occurring at temperatures below 900deg C. or below 800deg C. The blocking layers may be a first blocking layer made of ...