US Patent Issued to Enphase Energy on May 20 for "Gallium nitride bi-directional high electron mobility transistor in switched-mode neutral forming device applications" (California Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,754, issued on May 20, was assigned to Enphase Energy Inc. (Petaluma, Calif.).

"Gallium nitride bi-directional high electron mobility transistor in switched-mode neutral forming device applications" was invented by Michael J. Harrison (Petaluma, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A switched-mode neutral forming device is provided herein and comprises one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch and a controller, coupled to the plurality of switches, for drivi...