US Patent Issued to ENKRIS SENICONDUCTOR on Dec. 9 for "Schottky diode and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,561, issued on Dec. 9, was assigned to ENKRIS SENICONDUCTOR INC. (Suzhou, China).

"Schottky diode and manufacturing method thereof" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a Schottky diode and a manufacturing method thereof. The Schottky diode includes a substrate, a first semiconductor layer, a heterostructure layer, and a passivation layer, where the passivation layer includes a first groove and a second groove, and the first groove and the second groove penetrate the passivation layer and expose the heterostructure layer; a second semiconductor layer, where the second semiconductor laye...