US Patent Issued to ENKRIS SEMICONDUCTOR on Sept. 9 for "Substrate stripping method for semiconductor structure by irradiating AlGaN" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,405, issued on Sept. 9, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Substrate stripping method for semiconductor structure by irradiating AlGaN" was invented by Kai Cheng (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for stripping a substrate of a semiconductor structure, including: providing a substrate, a first AlN layer, a first AlGaN layer and a function layer from bottom to top; and irradiating the first AlGaN layer from the substrate with laser light to decompose the first AlGaN layer, such that the function layer is separated from the substrate and the first AlN layer."

The patent was f...