US Patent Issued to ENKRIS SEMICONDUCTOR on Sept. 16 for "Method of manufacturing a semiconductor structure, which can be applied to full-color LED" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,138, issued on Sept. 16, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Method of manufacturing a semiconductor structure, which can be applied to full-color LED" was invented by Kai Cheng (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method of manufacturing a semiconductor structure. Due to different hole ratios of openings of a mask corresponding to one unit region of a substrate, flow rates of reactive gas in openings are different when growing a light emitting layer. In this way, growth rates of the light emitting layers in openings are different, and doping efficiencies of the l...