US Patent Issued to ENKRIS SEMICONDUCTOR on Oct. 21 for "Semiconductor manufacturing method using sacrificial layer etching for doping concentration reduction" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,349, issued on Oct. 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Semiconductor manufacturing method using sacrificial layer etching for doping concentration reduction" was invented by Kai Cheng (Jiangsu, China) and Peng Xiang (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method of manufacturing a semiconductor structure. The manufacturing method includes following steps: at step S1: forming a first epitaxial structure above a substrate, where the first epitaxial structure is doped with a doping element; at step S2: forming a sacrificial layer above the first epitaxial structure;...