US Patent Issued to ENKRIS SEMICONDUCTOR on Nov. 25 for "N-face polar GaN-based device and composite substrate thereof, and method of manufacturing composite substrate" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,700, issued on Nov. 25, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"N-face polar GaN-based device and composite substrate thereof, and method of manufacturing composite substrate" was invented by Kai Cheng (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An N-face polar GaN-based device, a composite substrate thereof, and a method of manufacturing the composite substrate are provided in the present disclosure. The N-face polar GaN-based composite substrate includes: a semiconductor substrate, an insulating layer on the semiconductor substrate and a GaN-based material layer on upper surface of the insulating layer; a su...