US Patent Issued to ENKRIS SEMICONDUCTOR on May 6 for "Group III nitride structures and manufacturing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,912, issued on May 6, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Group III nitride structures and manufacturing methods thereof" was invented by Kai Cheng (Suzhou, China) and Weihua Liu (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A group-III-nitride structure and a manufacturing method thereof are provided. In the manufacturing method, one or more grooves are formed by etching a first group-III-nitride epitaxial layer with a patterned first mask layer as a mask; then a second mask layer is formed at least on one or more bottom walls of the one or more grooves, and a first epitaxial growth is performed on the first ...