US Patent Issued to ENKRIS SEMICONDUCTOR on May 20 for "Schottky diode and manufacturing method therefor" (Chinese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,087, issued on May 20, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Schottky diode and manufacturing method therefor" was invented by Kai Cheng (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a Schottky diode and a manufacturing method therefor. The Schottky diode includes a nitride channel layer; a nitride barrier layer formed on the nitride channel layer; a nitride cap layer formed on the nitride barrier layer, wherein the nitride cap layer includes an active region and an inactive region; a passivation layer formed on the nitride cap layer, where the passivation layer includes a first groove penetrating...