ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,725, issued on May 13, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).
"Enhancement-mode semiconductor device" was invented by Kai Cheng (Suzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is an enhancement-mode semiconductor device, comprising: a substrate; a p-type semiconductor layer, the p-type semiconductor layer being disposed on the substrate; an n-type semiconductor layer, the n-type semiconductor layer being disposed on the p-type semiconductor layer, a groove being formed in a gate region of the n-type semiconductor layer, and the first groove penetrating the n-type semiconductor layer; a channel layer, the c...