US Patent Issued to ENKRIS SEMICONDUCTOR on March 25 for "Semiconductor structure and manufacturing method for the same" (Chinese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,547, issued on March 25, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Semiconductor structure and manufacturing method for the same" was invented by Kai Cheng (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first n-type semiconductor layer, a p-type semiconductor layer, and a second n-type semiconductor layer which are stacked. A buried layer made of AlGaN is disposed in the first n-type semiconductor layer. A trench at least penetrates through the second n-type semiconductor layer and...