US Patent Issued to ENKRIS SEMICONDUCTOR on March 25 for "Method of manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,567, issued on March 25, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Method of manufacturing semiconductor structure" was invented by Kai Cheng (Jiangsu, China) and Liyang Zhang (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of manufacturing a semiconductor structure. The method includes: providing a substrate, where the substrate includes a plurality of component areas and peripheral areas surrounding the plurality of component areas; next, forming a sacrificial layer on each of the plurality of component areas, and forming a semiconductor active layer on the sacrificial layer and the substrate...