US Patent Issued to ENKRIS SEMICONDUCTOR on June 17 for "Semi-conductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,207, issued on June 17, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Semi-conductor structure and manufacturing method thereof" was invented by Kai Cheng (Jiangsu, China) and Dandan Zhu (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semi-conductor structure and a manufacturing method thereof. The semi-conductor structure includes: a substrate, a heterojunction, a P-type ion doped layer and a gate insulation layer disposed from bottom to top, wherein the heterojunction includes a source region, a drain region and a gate region; the P-type ion doped layer in the gate region includes an activated region an...