US Patent Issued to ENKRIS SEMICONDUCTOR on July 8 for "Semiconductor structure and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,649, issued on July 8, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Semiconductor structure and method for manufacturing the same" was invented by Kai Cheng (Suzhou, China) and Yu Zhu (Nantong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure and a method for manufacturing the same, which solves a problem that an existing semiconductor structure is difficult to deplete a carrier concentration of a channel under a gate to realize an enhancement mode device. The semiconductor structure includes: a channel layer and a barrier layer superimposed in sequence, wherein a gate regi...