US Patent Issued to ENKRIS SEMICONDUCTOR on July 29 for "GaN-based semiconductor structures" (Chinese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,355, issued on July 29, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"GaN-based semiconductor structures" was invented by Kai Cheng (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a GaN-based semiconductor structure, including: a substrate; a channel layer; a barrier layer, where the channel layer and the barrier layer each include a channel region, a source region and a drain region; one or more grooves provided in at least one of the source region or the drain region, where, for each of the grooves, a length of a first side edge adjacent to the channel region and located on a bottom wal...