US Patent Issued to ENKRIS SEMICONDUCTOR on July 1 for "Preparation method for resonant cavity light-emitting diode" (Chinese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,506, issued on July 1, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Preparation method for resonant cavity light-emitting diode" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method for a resonant cavity light-emitting diode comprises: forming a first mirror and a first semiconductor layer on a substrate in sequence; forming an active layer on the first semiconductor layer; and forming a second semiconductor layer and a second mirror on the active layer in sequence. The preparation method further comprises: planarizing at least one of a first contact surface between the first semi...