ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,539, issued on Jan. 27, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).
"Enhancement-mode semiconductor device" was invented by Kai Cheng (Suzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is an enhancement-mode semiconductor device, comprising: a substrate; a p-type nitride semiconductor layer and an n-type nitride semiconductor layer formed on the substrate in sequence, the p-type nitride semiconductor layer having a first protruding structure at a gate region of the p-type nitride semiconductor layer; the n-type nitride semiconductor layer having a first through hole corresponding to the first protruding structure,...