US Patent Issued to ENKRIS SEMICONDUCTOR on Jan. 27 for "Composite substrate and preparation method thereof, and semiconductor device structure" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,766, issued on Jan. 27, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Composite substrate and preparation method thereof, and semiconductor device structure" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A composite substrate includes a substrate, a high-resistance layer located on the substrate, the high-resistance layer comprising a first low-temperature aluminum nitride (AlN) layer, a high-temperature AlN layer and a second low-temperature AlN layer which are stacked in sequence, and a growth substrate located on a side, away from the substrate, of the high-resistance layer. Under the action...