US Patent Issued to ENKRIS SEMICONDUCTOR on Jan. 13 for "Multi-quantum well structure, light emitting diode and light emitting component" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,123, issued on Jan. 13, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Multi-quantum well structure, light emitting diode and light emitting component" was invented by Weihua Liu (Suzhou, China) and Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-quantum well structure includes at least one lamination layer, each lamination layer includes a first film layer, an insertion layer and a second film layer, and the at least one lamination layer includes a plurality of lamination layers which are stacked with each other. The insertion layer is located between the first film layer and the second film layer. The i...