ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,656, issued on Dec. 9, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).
"Full-color LED epitaxial structure" was invented by Kai Cheng (Suzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a full-color LED epitaxial structure, having different area ratios of pillars corresponding to an unit area of a substrate, which is utilized to realize different flow rates of reaction gas around each of the pillars when a light-emitting layer is grown, and different doping efficiency of each element in the growing light-emitting layer, which in turn realizes different composition ratios of each element in the growing light-emitting ...