US Patent Issued to ENKRIS SEMICONDUCTOR on Dec. 2 for "Enhanced semiconductor structures and manufacturing methods thereof" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,025, issued on Dec. 2, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Enhanced semiconductor structures and manufacturing methods thereof" was invented by Kai Cheng (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a semiconductor substrate, a heterojunction structure, a cap layer, a first passivation layer and a second passivation layer disposed from bottom to up; a trench penetrating through the first passivation layer and the second passivation layer; and a P-type semiconductor layer locate...