US Patent Issued to ENKRIS SEMICONDUCTOR on Dec. 16 for "Semiconductor light-emitting device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,745, issued on Dec. 16, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Semiconductor light-emitting device and manufacturing method thereof" was invented by Zhizhong Guo (Jiangsu, China) and Liyang Zhang (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light-emitting device and a manufacturing method for same. The manufacturing method for the semiconductor light-emitting device comprises: forming a dielectric layer on a substrate, the dielectric layer being provided with a plurality of openings exposing the substrate; performing epitaxial growth on the substrate using the dielectric layer as a mask to form...