ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,200, issued on Aug. 19, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).
"Enhancement-type semiconductor structure and manufacturing method thereof" was invented by Kai Cheng (Jiangsu, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an enhancement-type semiconductor structure and a manufacturing method thereof. The enhancement-type semiconductor structure includes: a semiconductor substrate and a heterojunction structure distributed from bottom to top; where the heterojunction structure includes a channel layer close to the semiconductor substrate and a first potential barrier layer far away from the s...