US Patent Issued to ENKRIS SEMICONDUCTOR on Aug. 12 for "Semiconductor structure with diffusion blocking layer and preparing method for semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,621, issued on Aug. 12, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Semiconductor structure with diffusion blocking layer and preparing method for semiconductor structure" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor structure and a preparing method for a semiconductor structure, which relate to the technical field of microelectronics. The semiconductor structure includes a buffer layer including a diffusion element; a diffusion blocking layer formed on the buffer layer, the diffusion blocking layer including an adsorptive element; and a channel layer formed on ...