US Patent Issued to Enkris Semiconductor (Wuxi) on Nov. 18 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,760, issued on Nov. 18, was assigned to Enkris Semiconductor (Wuxi) Ltd. (Wuxi, China).

"Semiconductor structure and manufacturing method thereof" was invented by Weihua Liu (Wuxi, China) and Kai Cheng (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an n-type semiconductor layer, a functional layer, a p-type semiconductor layer, a first AlN layer and a first heavily doped n-type semiconductor layer arranged in sequence. The first AlN layer is provided to reduce the diffusion of p-type ions from the p-type...