US Patent Issued to ENF TECHNOLOGY on Sept. 16 for "Etchant composition for silicon layer and etching method using the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,415,955, issued on Sept. 16, was assigned to ENF TECHNOLOGY Co. LTD. (Yongin-si, South Korea).

"Etchant composition for silicon layer and etching method using the same" was invented by Jeong Sik Oh (Yongin-si, South Korea), Hak Soo Kim (Yongin-si, South Korea), Gi Young Kim (Yongin-si, South Korea), Myung Ho Lee (Yongin-si, South Korea) and Myung Geun Song (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an etchant composition for a silicon layer including: a fluoride-based compound; a nitrate-based compound; an acid mixture including a phosphoric acid-based inorganic acid and an organic acid; and a nitrosyl compound a...