US Patent Issued to EMEMORY TECHNOLOGY on Sept. 9 for "One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,850, issued on Sept. 9, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method" was invented by Tsao-Hsin Yang (Hsinchu County, Taiwan) and Ping-Lung Ho (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An OTP memory cell for a PUFF technology includes a first select transistor, a first antifuse transistor and a second antifuse transistor. A first drain/source terminal of the first select transistor is connected with a bit line. A gate terminal of the first select transistor is conne...