US Patent Issued to EMEMORY TECHNOLOGY on Nov. 25 for "Non-volatile memory and reference current generator thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,526, issued on Nov. 25, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"Non-volatile memory and reference current generator thereof" was invented by Chih-Yang Huang (Hsinchu County, Taiwan) and Woan-Yun Hsiao (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory receives a supply voltage. The non-volatile memory includes a reference current generator and a sensing circuit. The reference current generator provides a reference current to the sensing circuit. The reference current generator includes a control voltage generation circuit, a current path selecting circuit and a mirroring circuit. The con...