US Patent Issued to eMemory Technology on May 6 for "Level shifter with voltage stress durability and method for driving the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,367, issued on May 6, was assigned to eMemory Technology Inc. (Hsinchu, Taiwan).

"Level shifter with voltage stress durability and method for driving the same" was invented by Chun-Yuan Lo (Hsinchu County, Taiwan), Wu-Chang Chang (Hsinchu County, Taiwan) and Bo-Chang Li (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A level shifter includes a cross-coupled transistor pair, first through third biased transistor pairs and a differential input pair sequentially coupled in series, and further includes a sub level shifter. The first biased transistor pair is controlled by a first reference voltage. The second biased transistor pai...