ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,294, issued on July 29, was assigned to EMEMORY TECHNOLOGY INC. (Hsinchu, Taiwan).
"Electrostatic discharge circuit" was invented by Yun-Jen Ting (Hsinchu, Taiwan), Chih-Wei Lai (Hsinchu County, Taiwan), Yi-Han Wu (Hsinchu County, Taiwan), Kun-Hsin Lin (Hsinchu County, Taiwan) and Hsin-Kun Hsu (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An ESD circuit includes a first P-type transistor, a second P-type transistor, a third P-type transistor, a first ESD current path, a second ESD current path, a biasing circuit and a control circuit. The control circuit is connected between the pad and a first node. The first P-type transis...