US Patent Issued to EMEMORY TECHNOLOGY on Jan. 20 for "Non-volatile memory with auxiliary select gate line driver" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,123, issued on Jan. 20, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"Non-volatile memory with auxiliary select gate line driver" was invented by Wei-Chiang Ong (Hsinchu County, Taiwan) and Hsueh-Wei Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory with an auxiliary select gate line driver is provided. The array structure of the non-volatile memory comprises plural 2T2C memory cells in an array arrangement. The memory cells in the array structure are connected with the corresponding auxiliary select gate lines. The auxiliary select gate line driver can output specified driving voltages ...