US Patent Issued to EMEMORY TECHNOLOGY on Jan. 13 for "Non-volatile memory cell of array structure and associated controlling method" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,986, issued on Jan. 13, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"Non-volatile memory cell of array structure and associated controlling method" was invented by Chia-Jung Hsu (Hsinchu County, Taiwan), Yun-Jen Ting (Hsinchu County, Taiwan), Cheng-Heng Chung (Hsinchu County, Taiwan), Chun-Hsiao Li (Hsinchu County, Taiwan) and Tsung-Mu Lai (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory cell includes a select transistor and a memory transistor. The first drain/source terminal of the select transistor is connected with a first control terminal. The second drain/source terminal of the select...