US Patent Issued to EMEMORY TECHNOLOGY on Dec. 16 for "Memory cell of charge-trapping non-volatile memory" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,620, issued on Dec. 16, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"Memory cell of charge-trapping non-volatile memory" was invented by Chun-Hsiao Li (Hsinchu County, Taiwan), Tsung-Mu Lai (Hsinchu County, Taiwan), Cheng-Yen Shen (Hsinchu County, Taiwan) and Chia-Jung Hsu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell of a charge-trapping non-volatile memory is provided. The memory cell is formed on a well region of a semiconductor substrate. The memory cell includes a storage transistor. A gate structure of the storage transistor includes a first tunneling layer, a second tunneling layer, a tra...