US Patent Issued to EMEMORY TECHNOLOGY on Aug. 26 for "Memory cell and array structure of non-volatile memory and associated control method" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,716, issued on Aug. 26, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"Memory cell and array structure of non-volatile memory and associated control method" was invented by Hsueh-Wei Chen (Hsinchu County, Taiwan) and Wei-Chiang Ong (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell is connected to a source line, a bit line, a word line, an assist gate line and an erase line. When a program action is performed, a weak programming procedure is first performed on the memory cell, and then a strong programming procedure is performed on the memory cell. When the weak programming procedure is performed, an o...