ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,804, issued on Aug. 12, was assigned to eMemory Technology Inc. (Hsin-Chu, Taiwan).
"Anti-fuse memory device" was invented by Chia-Fu Chang (Hsinchu County, Taiwan), Chun-Hung Lin (Hsinchu County, Taiwan), Jen-Yu Peng (Hsinchu County, Taiwan) and You-Ruei Chuang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An anti-fuse memory device includes an anti-fuse module, a reference current circuit and a controller. A write enable signal enables a write controller and a write buffer of the anti-fuse module to program a selected anti-fuse memory cell in an anti-fuse array of the anti-fuse module, and a timing controller of the anti-f...