US Patent Issued to EMEMORY TECHNOLOGY on April 29 for "One time programming memory cell with fin field-effect transistor using physically unclonable function technology" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,883, issued on April 29, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"One time programming memory cell with fin field-effect transistor using physically unclonable function technology" was invented by Lun-Chun Chen (Hsinchu County, Taiwan) and Ping-Lung Ho (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An OTP memory cell includes an antifuse transistor, a first transistor and a second transistor. The antifuse transistor includes a first fin, a second fin, a first gate structure, a first drain/source contact layer and a second drain/source contact layer. A central region of the first fin and a central region of ...