US Patent Issued to EMEMORY TECHNOLOGY on April 22 for "Memory cell and array structure of non-volatile memory and associated control method" (Taiwanese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,326, issued on April 22, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"Memory cell and array structure of non-volatile memory and associated control method" was invented by Wei-Ming Ku (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell of a non-volatile memory includes a select transistor, a floating gate transistor, a first capacitor, a switching transistor and a second capacitor. A first drain/source terminal of the select transistor is connected with a source line. A gate terminal of the select transistor is connected with a word line. The two drain/source terminals of the floating gate transistor a...