US Patent Issued to Elite Semiconductor Microelectronics Technology on Nov. 4 for "IC die forming method and IC die structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,135, issued on Nov. 4, was assigned to Elite Semiconductor Microelectronics Technology Inc. (Hsinchu, Taiwan).

"IC die forming method and IC die structure" was invented by Chih-Sheng Chang (Hsinchu, Taiwan) and Isaac Y. Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit die forming method, for forming a plurality of integrated circuit dies on a semiconductor wafer, comprising: forming a first device, a second device in a first die in a first area; forming a metal layer connected to the first device and the second device; forming a third device, a fourth device in a second die in a second area; forming the metal...