US Patent Issued to ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY on May 27 for "Repairable semiconductor memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,583, issued on May 27, was assigned to ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC. (Hsinchu, Taiwan).

"Repairable semiconductor memory device" was invented by Min-Chung Chou (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A repairable semiconductor memory device includes an input/output bus, a plurality of stacked memory chips, and a redundant repair unit. Each of the memory chips compares a memory address information with an address information to be repaired to generate a first comparison result for determining whether to allow the input/output bus to access the data corresponding to the memory address information in the m...