US Patent Issued to Electronics and Telecommunications Research Institute on Feb. 25 for "CMOS logic element including oxide semiconductor" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,331, issued on Feb. 25, was assigned to Electronics and Telecommunications Research Institute (Daejeon, South Korea).

"CMOS logic element including oxide semiconductor" was invented by Sung Haeng Cho (Daejeon, South Korea), Byung-Do Yang (Daejeon, South Korea), Sooji Nam (Daejeon, South Korea), Jaehyun Moon (Daejeon, South Korea), Jae-Eun Pi (Daejeon, South Korea) and Jae-Min Kim (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer a...