US Patent Issued to EGTM on March 18 for "Area-selective method for forming thin film by using nuclear growth retardation" (South Korean Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,781, issued on March 18, was assigned to EGTM Co. LTD. (Suwon-si, South Korea).

"Area-selective method for forming thin film by using nuclear growth retardation" was invented by Jae Min Kim (Suwon-si, South Korea), Ha Na Kim (Suwon-si, South Korea), Woong Jin Choi (Suwon-si, South Korea), Ji Yeon Han (Suwon-si, South Korea), Ju Hwan Jeong (Suwon-si, South Korea) and Hyeon Sik Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear...