ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,168, issued on March 25, was assigned to Efficient Power Conversion Corp. (El Segundo, Calif.).
"Gate metal-insulator-field plate metal integrated circuit capacitor and method of forming the same" was invented by Jianjun Cao (Torrance, Calif.), Gordon Stecklein (Van Nuys, Calif.) and Muskan Sharma (Torrance, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit which includes a GaN FET and a metal-insulator-metal capacitor. The capacitor is fully integrated with a lateral GaN process flow, i.e., the same gate metal layer, field plate metal layer and dielectric layer of the GaN FET are also used to form the bottom plate, insula...