ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,669, issued on March 11, was assigned to Ecole Polytechnique Federale De Lausanne (Lausanne, Switzerland).
"High sensitivity single-photon avalanche diode array" was invented by Michel Ivan Antolovic (Lausanne, Switzerland), Claudio Bruschini (Villars-Sous-Yens, Switzerland) and Edoardo Charbon (Jouxtens-Mezery, Switzerland).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a photodetector array for capturing image data, comprising: -photodetector cells arranged on a substrate, each including a single-photon avalanche diode, wherein the active areas of the photodetector cells are neighbored along a hexagonal grid; -micr...