US Patent Issued to ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) on Nov. 18 for "Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid" (Swiss Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,474,294, issued on Nov. 18, was assigned to ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) (Lausanne, Switzerland).

"Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid" was invented by Junrui Zhang (Ecublens, Switzerland), Francesco Bellando (Renens, Switzerland), Erick Garcia Cordero (Lausanne, Switzerland) and Mihai Adrian Ionescu (Ecublens, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure concerns a Field-Effect Transistor device or sensor comprising at least one drain region, at least one source region, at least a channel region, at least a first gate connected to the chann...