ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,442,788, issued on Oct. 14, was assigned to ECOLE POLYTECHNIQUE; CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France).
"Multi-gate OECT based sensor" was invented by Anna Shirinskaya (Orsay Ville, France) and Yvan Bonnassieux (Paris).
According to the abstract* released by the U.S. Patent & Trademark Office: "An organo electro chemical transistor based sensor including at least one set of source and drain electrodes, a plurality of gate electrodes for this set, at least one channel connected to the source and drain electrodes of the at least one set; and at least two gate electrodes being differently functionalized."
The patent was filed on July 9, 2020, under Application No. 17/62...