ALEXANDRIA, Va., June 6 -- United States Patent no. 12,281,407, issued on April 22, was assigned to EBNER Industrieofenbau GmbH (Leonding, Austria).
"Device for producing silicon carbide single crystals" was invented by Robert Ebner (Leonding, Austria), Kanaparin Ariyawong (Leonding, Austria), Ghassan Barbar (Neunkirchen, Germany) and Chih-Yung Hsiung (Leonding, Austria).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device for producing single crystals of silicon carbide has a furnace and a chamber with a crucible and a seed crystal, the chamber being accommodated in the furnace, wherein a base material containing silicon carbide is arranged in the crucible, wherein the base material contains a mixture of ...