US Patent Issued to E2GAN on Dec. 16 for "Semiconductor device with vertically stacked GaN complementary FETs" (Luxembourger Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,699, issued on Dec. 16, was assigned to E2GAN S.A. (Luxembourg).

"Semiconductor device with vertically stacked GaN complementary FETs" was invented by Nadim Chowdhury (Luxembourg).

According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure pertains to a semiconductor device comprising a substrate layer, a buffer layer arranged on the substrate layer, a channel layer arranged on the buffer layer, and a barrier layer forming a two-dimensional electron gas (2DHG) at its interface with the channel layer, a plurality of epitaxial layers arranged on the barrier layer forming a two-dimensional hole gas, a plurality of source terminals, of drain terminals...