US Patent Issued to E Ink Holdings on Jan. 13 for "Thin film transistor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,031, issued on Jan. 13, was assigned to E Ink Holdings Inc. (Hsinchu, Taiwan).

"Thin film transistor structure" was invented by Ming-Kai Chuang (Hsinchu, Taiwan) and Lih-Hsiung Chan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor structure includes a gate electrode, a gate insulation layer, a first amorphous silicon layer, a source/drain electrode, and a second amorphous silicon layer. The gate insulation layer is located on the gate electrode. The first amorphous silicon layer is located on the gate insulation layer. The source/drain electrode is located on the first amorphous silicon layer. The second amorpho...