ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,327, issued on Nov. 11, was assigned to DYNEX SEMICONDUCTOR Ltd. (Lincoln, Great Britain) and ZHUZHOU CRRC TIMES SEMICONDUCTOR Co. LTD (Zhuzhou, China).

"Semiconductor device" was invented by Luther-King Ngwendson (Lincoln, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "We herein describe a power semiconductor device having a semiconductor substrate including an active region and an edge termination region surrounding the active region, an edge termination structure located in the edge termination region of the semiconductor substrate, and a plurality of oxide segments located over the upper surface of the edge termination region of th...