US Patent Issued to DYNEX SEMICONDUCTOR, ZHUZHOU CRRC TIMES SEMICONDUCTOR on May 27 for "SIC MOSFET structures with asymmetric trench oxide" (British Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,561, issued on May 27, was assigned to DYNEX SEMICONDUCTOR Ltd. (Lincolnshire, Great Britain) and ZHUZHOU CRRC TIMES SEMICONDUCTOR Co. LTD. (Hunan, China).

"SIC MOSFET structures with asymmetric trench oxide" was invented by Luther-King Ekonde Ngwendson (Lincolnshire, Great Britain), Ian Deviny (Lincolnshire, Great Britain) and Yogesh Kumar Sharma (Lincolnshire, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "We herein describe a silicon-carbide (SiC) based power semiconductor device comprising: a drain region of a first conductivity type; a drift region of the first conductivity type disposed on the drain region, the drift region havin...